pd -2.470a ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters features description hexfred tm diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode hexfred tm HFA80NK40C absolute maximum ratings (per leg) note: ? limited by junction temperature ? l = 100h, duty cycle limited by max t j a w c/w k/w thermal - mechanical characteristics -55 to +150 35 (4.0) ???? 50 (5.7) parameter max. units v r cathode-to-anode voltage 400 v i f @ t c = 25c continuous forward current 89 i f @ t c = 100c continuous forward current 44 i fsm single pulse forward current ? 300 i as maximum single pulse avalanche current ? 5.0 e as non-repetitive avalanche energy ? 1.4 mj p d @ t c = 25c maximum power dissipation 160 p d @ t c = 100c maximum power dissipation 63 t j operating junction and t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) parameter min. typ. max. units r q jc junction-to-case, single leg conducting ???? ???? 0.80 junction-to-case, both legs conducting ???? ???? 0.40 r q cs case-to-sink, flat , greased surface ???? 0.10 ???? wt weight ???? 58 (2.0) ???? g (oz) mounting torque lbf?in (n?m) base common cathode 3 1 2 common cathode anode 2 anode 1 to-249aa (modified) 5/5/97 v r = 400v v f (typ.) ? = 1v i f(av) = 80a q rr (typ.) = 200nc i rrm (typ.) = 6a t rr (typ.) = 30ns di (rec)m /dt (typ.) ? = 190a/s ? 125c
HFA80NK40C parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 400 ??? ??? v i r = 100a v fm max forward voltage ??? 1.1 1.3 i f = 40a ??? 1.3 1.5 v i f = 80a see fig. 1 ??? 1.0 1.2 i f = 40a, t j = 125c i rm max reverse leakage current ??? 0.50 3.0 a v r = v r rated ??? 0.75 4.0 ma t j = 125c, v r = 320v c t junction capacitance ??? 90 125 pf v r = 200v see fig. 3 l s series inductance ??? 8.0 ??? nh from terminal hole to terminal hole electrical characteristics (per leg) @ t j = 25c (unless otherwise specified) dynamic recovery characteristics (per leg) @ t j = 25c (unless otherwise specified) a/s nc a see fig. 2 parameter min. typ. max. units test conditions t rr reverse recovery time ??? 30 ??? i f = 1.0a, di f /dt = 200a/s, v r = 30v t rr1 ??? 67 100 ns t j = 25c see fig. t rr2 ??? 110 170 t j = 125c 5 i f = 40a i rrm1 peak recovery current ??? 6.0 11 t j = 25c see fig. i rrm2 ??? 9.0 16 t j = 125c 6 v r = 200v q rr1 reverse recovery charge ??? 200 540 t j = 25c see fig. q rr2 ??? 500 1300 t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ??? 240 ??? t j = 25c see fig. di (rec)m /dt2 during t b ??? 190 ??? t j = 125c 8 dimensions in millimeters and inches 4.95 (0.195) 61.21 (2.410) 60.71 (2.390) 37.85 (1.490) 38.35 (1.510) ref. 1.27 (0.050) 3.30 (0.130) 3.05 (0.120) 10.16 (0.400) 8.38 (0.330) 0.89 (0.035) 1.14 (0.045) 6.60 (0.260) 6.10 (0.240) 50.80 (2.000) ref. 25.65 (1.010) 25.15 (0.990) 12.70 (0.500) ref. 6.10 (0.240) 6.60 (0.260) 8.05 (0.317) 7.80 (0.307) 0.76 (0.030) 1.14 (0.045) 11.43 (0.450) ref. 22.86 (0.900) ref. dia. 4.45 (0.175) (7 plcs.) 13.21 (0.520) 12.70 (0.500) 8.64 (0.340) ref. (3 plcs.) 2 13 lead assignments 1 - anode 2 - cathode 3 - anode base common cathode conforms to jedec outline to - 249aa (modified)
HFA80NK40C fig. 4 - maximum thermal impedance z thjc characteristics, (per leg) fig. 2 - typical reverse current vs. reverse voltage, (per leg) fig. 3 - typical junction capacitance vs. reverse voltage, (per leg) fig. 1 - maximum forward voltage drop vs. instantaneous forward current, (per leg) 0.1 1 10 100 1000 10000 0 100 200 300 400 r r reverse voltage - v (v) t = 150 c reverse current - i ( a) t = 125 c t = 25c j j j 10 100 1000 1 10 100 1000 t = 25 c j reverse voltage - v (v) r t junction capacitance - c (pf) a 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150 c t = 125c t = 25c j j j 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1 thjc t , rectangular pulse duration (seconds) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 single pulse (thermal resistance) thermal impedance - z (k/w) 2 t 1 t p dm notes: 1. duty factor d = t / t 2. peak t = p x z + t j dm thjc c 2 1
HFA80NK40C fig. 7 - typical stored charge vs. di f /dt, (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt, (per leg) fig. 5 - typical reverse recovery vs. di f /dt, (per leg) fig. 6 - typical recovery current vs. di f /dt, (per leg) 40 60 80 100 120 140 160 100 1000 f di /dt - (a/ s) t - (ns) rr i = 100a i = 40a i = 20a v = 200v t = 125 c t = 25c r j j f f f 1 10 100 100 1000 f di /dt - (a/ s) i - (a) irrm i =100a i = 40a i = 20a v = 200v t = 125 c t = 25c r j j f f f 100 1000 10000 100 1000 f di /dt - (a/ s) di(rec)m/dt - (a/ s) i = 100a i = 20a i = 40a v = 200v t = 125 c t = 25c r j j f f f 0 500 1000 1500 2000 2500 100 1000 f di /dt - (a/ s) rr q - (nc) i = 100a i = 40a i = 20a v = 200v t = 12 5 c t = 25c r j j f f f
HFA80NK40C 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr v (aval) r(r at ed) i l(pk) v de cay time fig. 11 - avalanche test circuit and waveforms fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current reverse recovery circuit irfp250 d.u.t. l = 70 h v = 200v r 0.01 w g d s dif/dt adjust current monitor high-speed switch dut rg = 25 ohm + free-wheel diode vd = 50v l = 100 h world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 5/97
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